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MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:46:31Z
date available2017-09-04T18:46:31Z
date copyright40126
date issued2009
identifier otherKJSHPCAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;jse/handle/yse/227769
description abstractThis drawing documents the general requirements of a 3.3 V CMOS first-in, first-out memories, with an operating temperature range of -55°C to +125°C.
languageEnglish
titleDSCC-VID-V62/03639 REV Anum
titleMICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICONen
typestandard
page27
statusActive
treeDLA - CC - DLA Land and Maritime:;2009
contenttypefulltext


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