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SMD-5962-08220
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:49:49Z | |
| date available | 2017-09-04T18:49:49Z | |
| date copyright | 01/21/2009 | |
| date issued | 2009 | |
| identifier other | KSZHLCAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;jsery=authoF2376596FCDCAC4261598F1EFDEC014A/handle/yse/231200 | |
| description abstract | This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. | |
| language | English | |
| title | SMD-5962-08220 | num |
| title | MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1M X 16 (16M) 3.3 V, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON | en |
| type | standard | |
| page | 21 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2009 | |
| contenttype | fulltext |
