Show simple item record

SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:48:17Z
date available2017-09-04T18:48:17Z
date copyright08/24/2007
date issued2007
identifier otherKOIWACAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;jsessionid=47037D83FCDCAC426159DD6E273C9FCD/handle/yse/229532
description abstractThis specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance are provided for oath device type as specified in MIL-PRF-19500. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/645Cnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANSen
typestandard
page12
statusRevised
treeDLA - CC - DLA Land and Maritime:;2007
contenttypefulltext


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record