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Semiconductor Device, Field Effect Transistors, N-Channel and PChannel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:42:10Z
date available2017-09-04T18:42:10Z
date copyright07/14/2011
date issued2011
identifier otherJZASMEAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;jsessioutho1603177793325273135A68A10958014A0/handle/yse/223727
description abstractThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of product assurance is provided for unencapsulated device. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification.
languageEnglish
titleMIL-PRF-19500/607B VALID NOTICE 1num
titleSemiconductor Device, Field Effect Transistors, N-Channel and PChannel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHCen
typestandard
page1
statusActive
treeDLA - CC - DLA Land and Maritime:;2011
contenttypefulltext


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