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JEDEC JESD51-14
Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path
| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T17:48:32Z | |
| date available | 2017-09-04T17:48:32Z | |
| date copyright | 40483 | |
| date issued | 2010 | |
| identifier other | ERKSEDAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;jsessioutho9279AF67081DAC4/handle/yse/171733 | |
| description abstract | This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" RθJC (θJC) of semiconductor devices with a heat flow through a single path, i.e. semiconductor devices with a high conductive heat flow path from the die surface that is heated to a package case surface that can be cooled by contacting it to an external heat sink. The thermal resistance measured using this document is RθJCx or θJCx, where x denotes the package case side, where the heat is extracted, usually top (x= top) or bottom (x= bot) side. | |
| language | English | |
| title | JEDEC JESD51-14 | num |
| title | Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path | en |
| type | standard | |
| page | 46 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;2010 | |
| contenttype | fulltext |
