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IEC 62047-29
Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin films under room temperature - Edition 1.0
| contributor author | IEC - International Electrotechnical Commission | |
| date accessioned | 2018-07-31T09:58:20Z | |
| date available | 2018-07-31T09:58:20Z | |
| date copyright | 2017.11.01 | |
| date issued | 2017 | |
| identifier other | MPZUCGAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;jsessiouthor:%22NAVY%20-%20YD%20-/handle/yse/264536 | |
| description abstract | This part of IEC 62047 specifies a relaxation test method for measuring electromechanical properties of freestanding conductive thin films for micro-electromechanical systems (MEMS) under controlled strain and room temperature. Freestanding thin films of conductive materials are extensively utilized in MEMS, opto-electronics, and flexible/wearable electronics products. Freestanding thin films in the products experience external and internal stresses which could be relaxed even under room temperature during a period of operation, and this relaxation leads to time-dependent variation of electrical performances of the products. This test method is valid for isotropic, homogeneous, and linearly viscoelastic materials. | |
| language | English | |
| title | IEC 62047-29 | num |
| title | Semiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method for freestanding conductive thin films under room temperature - Edition 1.0 | en |
| type | standard | |
| page | 16 | |
| status | Active | |
| tree | IEC - International Electrotechnical Commission:;2017 | |
| contenttype | fulltext |
