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MIL-PRF-19500/659 VALID NOTICE 2
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effect), Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
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DLA - CC - DLA Land and Maritime
Year: 2011
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MIL-PRF-19500/659 VALID NOTICE 2
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| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:39:50Z | |
| date available | 2017-09-04T18:39:50Z | |
| date copyright | 07/15/2011 | |
| date issued | 2011 | |
| identifier other | JTGSMEAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quein=a/handle/yse/221526 | |
| language | English | |
| title | MIL-PRF-19500/659 VALID NOTICE 2 | num |
| title | Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effect), Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR | en |
| type | standard | |
| page | 1 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2011 | |
| contenttype | fulltext |