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SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:41:37Z
date available2017-09-04T18:41:37Z
date copyright04/11/2011
date issued2011
identifier otherJXJBIEAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;quein=a/handle/yse/223080
description abstractThis specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/757Anum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSFen
typestandard
page21
statusActive
treeDLA - CC - DLA Land and Maritime:;2011
contenttypefulltext


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