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MIL-PRF-19500/657B
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:42:33Z | |
| date available | 2017-09-04T18:42:33Z | |
| date copyright | 01/26/2011 | |
| date issued | 2011 | |
| identifier other | JZTERDAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quein=a/handle/yse/224009 | |
| description abstract | This specification covers the performance requirements for N and P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor die. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/657B | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC | en |
| type | standard | |
| page | 15 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2011 | |
| contenttype | fulltext |
