DSCC-VID-V62/03639 REV A

MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T18:46:31Z
date available	2017-09-04T18:46:31Z
date copyright	40126
date issued	2009
identifier other	KJSHPCAAAAAAAAAA.pdf
identifier uri	http://yse.yabesh.ir/std;query=autho162sAF67081DAC4/handle/yse/227769
description abstract	This drawing documents the general requirements of a 3.3 V CMOS first-in, first-out memories, with an operating temperature range of -55°C to +125°C.
language	English
title	DSCC-VID-V62/03639 REV A	num
title	MICROCIRCUIT, DIGITAL, 3.3 V CMOS FIRST-IN, FIRST-OUT MEMORIES, MONOLITHIC SILICON	en
type	standard
page	27
status	Active
tree	DLA - CC - DLA Land and Maritime:;2009
contenttype	fulltext