JEDEC JESD353

The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method

contributor author	JEDEC - Solid State Technology Association
date accessioned	2017-09-04T16:01:16Z
date available	2017-09-04T16:01:16Z
date copyright	04/01/1968 (R 2009)
date issued	2009
identifier other	RKQISCAAAAAAAAAA.pdf
identifier uri	http://yse.yabesh.ir/std;query=autho1826AF679D/handle/yse/64483
description abstract	INTRODUCTION The following noise measurement method applies to transistors whose noise has a Gaussian power distribution, to transistors whose noise has a flat (white) power distribution, and to transistors whose noise has a l/f (power inversely proportional to frequency) power distribution. Figure 1 shows a suitable method for measuring the transistor noise figure at frequencies equal to or less than 20 kHz. The values for the generator source resistance (as seen by the transistor), Rs, the d-c operating conditions, and free-air, lead or case temperature will depend upon the application and upon the optimum conditions for any particular device. These quantities, as well as the test frequency, should be specified. Common-emitter (common-source) configuration is assumed unless otherwise indicated.
language	English
title	JEDEC JESD353	num
title	The Measurement of Transistor Noise Figure at Frequencies up to 20 kHz by Sinusoidal Signal-Generator Method	en
type	standard
page	14
status	Active
tree	JEDEC - Solid State Technology Association:;2009
contenttype	fulltext