درباره ما
MIL-PRF-19500/689 VALID NOTICE 1
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:46:18Z | |
| date available | 2017-09-04T18:46:18Z | |
| date copyright | 02/15/2006 | |
| date issued | 2006 | |
| identifier other | KIVWIBAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;query=autho54037D839D40527361598F1EFDEC014A/handle/yse/227467 | |
| language | English | |
| title | MIL-PRF-19500/689 VALID NOTICE 1 | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R | en |
| type | standard | |
| page | 1 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2006 | |
| contenttype | fulltext |
