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MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, TRIPLE 3-INPUT NOR GATE, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:49:12Z
date available2017-09-04T18:49:12Z
date copyright09/13/1999
date issued1999
identifier otherKRDMJAAAAAAAAAAA.pdf
identifier urihttp://yse.yabesh.ir/std;query=autho54037D839D40527361598F1EFDEC014A/handle/yse/230566
description abstractThis drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. Device class Q devices will replace device class M devices.
languageEnglish
titleSMD-5962-98630 REV Anum
titleMICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, TRIPLE 3-INPUT NOR GATE, MONOLITHIC SILICONen
typestandard
page26
statusActive
treeDLA - CC - DLA Land and Maritime:;1999
contenttypefulltext


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