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IEEE Std C62.59-2019

contributor authorIEEE - The Institute of Electrical and Electronics Engineers, Inc.
date accessioned2020-06-18T16:56:30Z
date available2020-06-18T16:56:30Z
date issued2019
identifier isbn978-1-5044-5824
identifier other08886679.pdf
identifier urihttp://yse.yabesh.ir/std;jsessioutho9193177793325273135A38A1095801/handle/yse/276509
description abstractThe basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.
languageEnglish
titleIEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodesen
titleIEEE Std C62.59-2019num
typeStandard
page41
treeIEEE - The Institute of Electrical and Electronics Engineers, Inc.:;2019
contenttypeFulltext
subject keywordsIEEE C62.59
subject keywordsavalanche breakdown
subject keywordselectrical characteristics
subject keywordssurge protective component (SPC)
subject keywordspunch-through
subject keywordselectrical ratings
subject keywordsfoldback
subject keywordstest methods
subject keywordsforward conduction
subject keywordsovervoltage protection
subject keywordsZener breakdown


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