JEDEC JEP139

Constant Temperature Aging to Characterize Aluminum Interconnect Metallization for Stress-Induced Voiding

contributor author	JEDEC - Solid State Technology Association
date accessioned	2017-09-04T16:52:41Z
date available	2017-09-04T16:52:41Z
date copyright	36861
date issued	2000
identifier other	WTXADBAAAAAAAAAA.pdf
identifier uri	http://yse.yabesh.ir/std;quessionid=2A40ear/handle/yse/116250
description abstract	This document describes a constant temperature (isothermal) aging method for testing aluminum (Al) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding. This method is valid for metallization/dielectric systems in which the dielectric is deposited onto the metallization at a temperature considerably above the intended use temperature, and above or equal to the deposition temperature of the metal. Although this is a wafer test, it is not a fast (less than 5 minutes per probe) test. It is intended to be used for lifetime prediction and failure analysis, not for production Go-NoGo lot checking.
language	English
title	JEDEC JEP139	num
title	Constant Temperature Aging to Characterize Aluminum Interconnect Metallization for Stress-Induced Voiding	en
type	standard
page	17
status	Active
tree	JEDEC - Solid State Technology Association:;2000
contenttype	fulltext
subject keywords	Metal Voiding
subject keywords	Reliability
subject keywords	SIV
subject keywords	Stress
subject keywords	Stress Voiding