درباره ما
JEDEC JES2
Transistor, Gallium Arsenide Power Fet, Generic Specification
| contributor author | JEDEC - Solid State Technology Association | |
| date accessioned | 2017-09-04T16:57:13Z | |
| date available | 2017-09-04T16:57:13Z | |
| date copyright | 01/01/1992 | |
| date issued | 1992 | |
| identifier other | XGBXCAAAAAAAAAAA.pdf | |
| identifier uri | http://yse.yabesh.ir/std;quessionid=2A40ear/handle/yse/120709 | |
| description abstract | Establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also know as MESFETs) designed for use in high-reliability space application such as spacecraft communications transmitters. Identifies the electrical parameters, wafer acceptance tests, screening tests, qualification tests, and lot acceptance tests pertinent to power GaAs FETs. Applicable to packaged and chip-carrier parts; portions may not be applicable to unpackaged and unmounted chips. | |
| language | English | |
| title | JEDEC JES2 | num |
| title | Transistor, Gallium Arsenide Power Fet, Generic Specification | en |
| type | standard | |
| page | 52 | |
| status | Active | |
| tree | JEDEC - Solid State Technology Association:;1992 | |
| contenttype | fulltext | |
| subject keywords | FETs - Field Effect Transistors | |
| subject keywords | GaAs Power FETs |
