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MIL-PRF-19500/772 (1)
SEMICONDUCTOR DEVICE, DIODE SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, 1N8036US THROUGH 1N8072US, 1N8073US THROUGH 1N8109US, AND 1N8110US THROUGH 1N8146US, JAN, JANTX, JANTXV, AND JANS
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T16:47:53Z | |
| date available | 2017-09-04T16:47:53Z | |
| date copyright | 04/17/2013 | |
| date issued | 2013 | |
| identifier other | WGMKGFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/111261 | |
| description abstract | This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power unipolar silicon transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL–PRF–19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/772 (1) | num |
| title | SEMICONDUCTOR DEVICE, DIODE SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, 1N8036US THROUGH 1N8072US, 1N8073US THROUGH 1N8109US, AND 1N8110US THROUGH 1N8146US, JAN, JANTX, JANTXV, AND JANS | en |
| type | standard | |
| page | 19 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |
