MIL-PRF-19500/553E

SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6391, JAN, JANTX, JANTXV, JANS, AND JANHC

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T17:11:36Z
date available	2017-09-04T17:11:36Z
date copyright	07/21/2011
date issued	2011
identifier other	YTAVMEAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/135154
description abstract	This specification covers the performance requirements for a silicon, fast recovery, schottky barrier semiconductor diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
language	English
title	MIL-PRF-19500/553E	num
title	SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6391, JAN, JANTX, JANTXV, JANS, AND JANHC	en
type	standard
page	15
status	Active
tree	DLA - CC - DLA Land and Maritime:;2011
contenttype	fulltext