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MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:12:29Z
date available2017-09-04T17:12:29Z
date copyright04/01/2011
date issued2011
identifier otherYVNKIEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/135992
description abstractThis drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example: CHART
The device types shall identify the circuit function as follows:
Device      Generic           Circuit        Access       Write                           End of write  type       number            function        time        speed        Write mode          indicator         Endurance  01       (see 6.4)        2K × 8 EEPROM     90 ns      1.0 ms           byte             [D bar][A bar][T bar][A bar] polling       10,000 cycles  02       (See 6.4)        2K × 8 EEPROM     70 ns      1.0 ms           byte             [D bar][A bar][T bar][A bar] polling       10,000 cycles  03       (see 6.4)        2K × 8 EEPROM     55 ns      1.0 ms           byte             [D bar][A bar][T bar][A bar] polling       10,000 cycles


The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:
        Outline letter                             Case outline                J            D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package               L            D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package               X            C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package


  Supply voltage range (VCC) - - - - - - - - - - - -    −0.3 V dc to +6.25 V dc   Storage temperature range- - - - - - - - - - - - -    −65°C to +150°C   Maximum power dissipation (PD) - - - - - - - - - -    1.0 W   Lead temperature (soldering, 10 seconds) - - - - -    +300°C   Junction temperature (TJ) 2/ - - - - - - - - - - -    +175°C   Thermal resistance, junction-to-case (θJC) - - - -      See MIL-M-38510, appendix C   Input voltage range (VIL, VIH) - - - - - - - - - -    −0.3 V dc to +6.25 V dc   Data retention - - - - - - - - - - - - - - - - - -    10 years (minimum)   Endurance- - - - - - - - - - - - - - - - - - - - -    10,000 cycles (minimum)   Chip clear voltage (VH)- - - - - - - - - - - - - -    12.0 V dc


  Supply voltage range (VCC) - - - - - - - - - - - - -     +4.5 V dc to +5.5 V dc   Case operating temperature range (Tc)- - - - - - - -     −55°C to +125°C   Input voltage, low range (VIL) - - - - - - - - - - -     −0.1 V dc to +0.8 V dc   Input voltage, high range (VIH)- - - - - - - - - - -     +2.0 V dc to VCC +0.3 V dc


Intended Use: Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for OEM application. When a military specification exists and the product covered by this drawing has been qualified for listing on QPL-38510, the device specified herein will be inactivated and will not be used for new design. The QPL-38510 product shall be the preferred item for all applications.
languageEnglish
titleSMD-5962-88676 REV Anum
titleMICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICONen
typestandard
page18
statusActive
treeDLA - CC - DLA Land and Maritime:;2011
contenttypefulltext


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