درباره ما
MIL-PRF-19500/630F
SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:14:55Z | |
| date available | 2017-09-04T17:14:55Z | |
| date copyright | 01/27/2012 | |
| date issued | 2012 | |
| identifier other | ZBSXTEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/138308 | |
| description abstract | This specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.4 for JANHC and JANKC die versions. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/630F | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F | en |
| type | standard | |
| page | 21 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2012 | |
| contenttype | fulltext |
