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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:15:11Z
date available2017-09-04T17:15:11Z
date copyright01/20/2012
date issued2012
identifier otherZCOVTEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/138628
description abstractThis specification covers the performance requirements for dual N-channel and P-channel, enhancement-mode, low-threshold logic level, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/759 REV Anum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, Fen
typestandard
page21
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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