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MIL-PRF-19500/634C
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:20:34Z | |
| date available | 2017-09-04T17:20:34Z | |
| date copyright | 09/12/2008 | |
| date issued | 2008 | |
| identifier other | ZQLGHCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/143729 | |
| description abstract | This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effect (SEE) characterization), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/634C | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR | en |
| type | standard | |
| page | 25 | |
| status | Revised | |
| tree | DLA - CC - DLA Land and Maritime:;2008 | |
| contenttype | fulltext |
