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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:23:17Z
date available2017-09-04T17:23:17Z
date copyright06/15/2012
date issued2012
identifier otherZYQEWEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/146520
description abstractThis specification covers the performance requirements for quad N-channel and quad P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistics support of existing equipment.
languageEnglish
titleMIL-PRF-19500/740 (1)num
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND Fen
typestandard
page22
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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