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SMD-5962-87611 REV E
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE THREE-INPUT AND GATE, MONOLITHIC SILICON
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:25:08Z | |
| date available | 2017-09-04T17:25:08Z | |
| date copyright | 41246 | |
| date issued | 2012 | |
| identifier other | CGVGBFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/148258 | |
| description abstract | This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. | |
| language | English | |
| title | SMD-5962-87611 REV E | num |
| title | MICROCIRCUIT, DIGITAL, ADVANCED CMOS, TRIPLE THREE-INPUT AND GATE, MONOLITHIC SILICON | en |
| type | standard | |
| page | 18 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2012 | |
| contenttype | fulltext |
