MIL-PRF-19500/516F (1)

DLA - CC - DLA Land and Maritime

SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, 1N6102URS THROUGH 1N6137URS, 1N6102AURS THROUGH 1N6137AURS, 1N6138URS THROUGH 1N6173URS, 1N6138AURS THROUGH 1N6173AURS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T17:28:25Z
date available	2017-09-04T17:28:25Z
date copyright	09/12/2013
date issued	2013
identifier other	CPPFGFAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/151571
description abstract	This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
language	English
title	MIL-PRF-19500/516F (1)	num
title	SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, 1N6102URS THROUGH 1N6137URS, 1N6102AURS THROUGH 1N6137AURS, 1N6138URS THROUGH 1N6173URS, 1N6138AURS THROUGH 1N6173AURS, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC	en
type	standard
page	23
status	Active
tree	DLA - CC - DLA Land and Maritime:;2013
contenttype	fulltext