درباره ما
MIL-PRF-19500/586K
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:35:54Z | |
| date available | 2017-09-04T17:35:54Z | |
| date copyright | 04/22/2011 | |
| date issued | 2011 | |
| identifier other | DJDQJEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/158782 | |
| description abstract | This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance are provided for unencapsulated devices.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/586K | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | en |
| type | standard | |
| page | 20 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2011 | |
| contenttype | fulltext |
