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MIL-PRF-19500/659
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:36:06Z | |
| date available | 2017-09-04T17:36:06Z | |
| date copyright | 08/20/1998 | |
| date issued | 1998 | |
| identifier other | DJSBEAAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/158982 | |
| description abstract | This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. | |
| language | English | |
| title | MIL-PRF-19500/659 | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR | en |
| type | standard | |
| page | 18 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;1998 | |
| contenttype | fulltext |
