SMD-5962-02517 REV B

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 128M X 8 bit STACKED DIE(1Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE

contributor author	DLA - CC - DLA Land and Maritime
date accessioned	2017-09-04T17:38:54Z
date available	2017-09-04T17:38:54Z
date copyright	06/17/2011
date issued	2011
identifier other	DREPMEAAAAAAAAAA.pdf
identifier uri	https://yse.yabesh.ir/std/handle/yse/161858
description abstract	This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
language	English
title	SMD-5962-02517 REV B	num
title	MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 128M X 8 bit STACKED DIE(1Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE	en
type	standard
page	40
status	Active
tree	DLA - CC - DLA Land and Maritime:;2011
contenttype	fulltext