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MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG X 48-BIT X 4-BANK (3-GIG), RADIATION-HARDENED, SYNCHRONOUS DRAM (SDRAM), MULTICHIP MODULE

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:40:25Z
date available2017-09-04T17:40:25Z
date copyright09/06/2012
date issued2012
identifier otherDVACCFAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/163342
description abstractThis drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
languageEnglish
titleSMD-5962-10230 REV Anum
titleMICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16-MEG X 48-BIT X 4-BANK (3-GIG), RADIATION-HARDENED, SYNCHRONOUS DRAM (SDRAM), MULTICHIP MODULEen
typestandard
page61
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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