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Semiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, and 2N7281, JANTXVM, D, and R, and JANSM, D, and R

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:41:52Z
date available2017-09-04T17:41:52Z
date copyright07/14/2011
date issued2011
identifier otherDZASMEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/164870
description abstractThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification.
languageEnglish
titleMIL-PRF-19500/604B VALID NOTICE 1num
titleSemiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, and 2N7281, JANTXVM, D, and R, and JANSM, D, and Ren
typestandard
page1
statusActive
treeDLA - CC - DLA Land and Maritime:;2011
contenttypefulltext


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