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SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:47:21Z
date available2017-09-04T17:47:21Z
date copyright08/24/2007
date issued2007
identifier otherEOIWACAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/170554
description abstractThis specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/642Dnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANSen
typestandard
page11
statusActive
treeDLA - CC - DLA Land and Maritime:;2007
contenttypefulltext


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