درباره ما
MIL-PRF-19500/452J (1)
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:48:12Z | |
| date available | 2017-09-04T17:48:12Z | |
| date copyright | 03/08/2012 | |
| date issued | 2012 | |
| identifier other | EQMPUEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/171375 | |
| description abstract | This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/452J (1) | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H | en |
| type | standard | |
| page | 22 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2012 | |
| contenttype | fulltext |
