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MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT (8M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:49:04Z
date available2017-09-04T17:49:04Z
date copyright01/27/2009
date issued2009
identifier otherESZHLCAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/172290
description abstractThis drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
languageEnglish
titleSMD-5962-07239num
titleMICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 16-BIT (8M), STATIC RANDOM ACCESS MEMORY (SRAM), (3.3 V), MONOLITHIC SILICONen
typestandard
page22
statusActive
treeDLA - CC - DLA Land and Maritime:;2009
contenttypefulltext


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