درباره ما
SMD-5962-11201
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4M X 18-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:52:45Z | |
| date available | 2017-09-04T17:52:45Z | |
| date copyright | 41184 | |
| date issued | 2012 | |
| identifier other | FCQQAFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/175890 | |
| description abstract | This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. | |
| language | English | |
| title | SMD-5962-11201 | num |
| title | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4M X 18-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, RADIATION HARDENED, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON | en |
| type | standard | |
| page | 31 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2012 | |
| contenttype | fulltext |
