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SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:53:41Z
date available2017-09-04T17:53:41Z
date copyright40515
date issued2010
identifier otherFFDYHDAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/176856
description abstractThis specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistics support of existing equipment.
languageEnglish
titleMIL-PRF-19500/594Bnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANSen
typestandard
page12
statusActive
treeDLA - CC - DLA Land and Maritime:;2010
contenttypefulltext


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