درباره ما
MIL-PRF-19500/658
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:56:07Z | |
| date available | 2017-09-04T17:56:07Z | |
| date copyright | 05/28/1998 | |
| date issued | 1998 | |
| identifier other | FLPBEAAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/179249 | |
| description abstract | This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization, see figure 4), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. | |
| language | English | |
| title | MIL-PRF-19500/658 | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR | en |
| type | standard | |
| page | 20 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;1998 | |
| contenttype | fulltext |
