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MIL-PRF-19500/638B VALID NOTICE 1
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T17:57:35Z | |
| date available | 2017-09-04T17:57:35Z | |
| date copyright | 07/15/2011 | |
| date issued | 2011 | |
| identifier other | FPGSMEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/180699 | |
| description abstract | This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification. | |
| language | English | |
| title | MIL-PRF-19500/638B VALID NOTICE 1 | num |
| title | Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR | en |
| type | standard | |
| page | 1 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2011 | |
| contenttype | fulltext |
