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MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED DUAL NON-INVERTING MOSFET DRIVER, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T17:59:23Z
date available2017-09-04T17:59:23Z
date copyright06/17/2002
date issued2002
identifier otherFTZZXAAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/182479
description abstractThis drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturer's Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.Intended Use: Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
languageEnglish
titleSMD-5962-99560 REV Anum
titleMICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED DUAL NON-INVERTING MOSFET DRIVER, MONOLITHIC SILICONen
typestandard
page19
statusActive
treeDLA - CC - DLA Land and Maritime:;2002
contenttypefulltext


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