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SMD-5962-89476 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABALE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:02:50Z | |
| date available | 2017-09-04T18:02:50Z | |
| date copyright | 05/09/2011 | |
| date issued | 2011 | |
| identifier other | ABPNKEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/185784 | |
| description abstract | This drawing describes requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". The complete PIN shall be as shown in the following example: The device type(s) shall identify the circuit function as follows: Device type Generic number 1/ Circuit function Propagation delay 01 16-Macrocell EPLD 35 ns 02 16-Macrocell EPLD 25 ns 03 16-Macrocell EPLD 15 ns The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style L GDIP3-T24, CDIP4-T24 24 Dual-in-line package 2/ X GACC1-J28 28 "J" lead chip carrier 2/ The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference. Supply voltage (VCC) - - - - - - - - - - - - - - −2.0 V dc to +7.0 V dc Programming supply voltage range (VPP) - - - - - −2.0 V dc to +13.5 V dc 4/ DC input voltage range - - - - - - - - - - - - - −2.0 V dc to +7.0 V dc 4/ Maximum power dissipation - - - - - - - - - - - 1.0 W 5/ Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (θJC): Case outlines L and X - - - - - - - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - −65°C to +150°C Temperature under bias range - - - - - - - - - - −55°C to +125°C Endurance - - - - - - - - - - - - - - - - - - - 25 erase/write cycles (minimum) Data retention - - - - - - - - - - - - - - - - - 10 years (minimum) Supply voltage (VCC) - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - −55°C to +125°C 6/ Input rise time (tR) - - - - - - - - - - - 50 ns maximum Input fall time (tF) - - - - - - - - - - - 50 ns maximum Intended Use: Microcircuits conforming to this drawing are intended for use when military specifications do no exist and qualified military devices that will perform the required function are not available for OEM application. When a military specification exists and the product covered by this drawing has been qualified for listing on QPL-38510, the device specified herein will be inactivated and will not be used for new design. The QPL-38510 product shall be the preferred item for all applications. | |
| language | English | |
| title | SMD-5962-89476 REV A | num |
| title | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABALE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON | en |
| type | standard | |
| page | 15 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2011 | |
| contenttype | fulltext |
