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MIL-PRF-19500/605C
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:03:09Z | |
| date available | 2017-09-04T18:03:09Z | |
| date copyright | 04/16/2008 | |
| date issued | 2008 | |
| identifier other | GDPCFCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/186114 | |
| description abstract | This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/605C | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R | en |
| type | standard | |
| page | 22 | |
| status | Revised | |
| tree | DLA - CC - DLA Land and Maritime:;2008 | |
| contenttype | fulltext |
