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MIL-PRF-19500/617D
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:04:30Z | |
| date available | 2017-09-04T18:04:30Z | |
| date copyright | 04/17/2009 | |
| date issued | 2009 | |
| identifier other | GHDTLCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/187451 | |
| description abstract | This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/617D | num |
| title | SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS | en |
| type | standard | |
| page | 12 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2009 | |
| contenttype | fulltext |
