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SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, JANTX, AND JANTXV

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:05:23Z
date available2017-09-04T18:05:23Z
date copyright04/28/2005
date issued2005
identifier otherGJLXHBAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/188305
description abstractThis specification covers the performance requirements for non-hermetic, epoxy, surface mount 1500 watt unipolar transient voltage suppressor diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500. Intended Use: The notes specified in MIL-PRF-19500 are applicable to this specification.
languageEnglish
titleMIL-PRF-19500/716num
titleSEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, JANTX, AND JANTXVen
typestandard
page15
statusActive
treeDLA - CC - DLA Land and Maritime:;2005
contenttypefulltext


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