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MIL-PRF-19500/565E
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:06:20Z | |
| date available | 2017-09-04T18:06:20Z | |
| date copyright | 39387 | |
| date issued | 2007 | |
| identifier other | GMAEBCAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/189279 | |
| description abstract | This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/565E | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS | en |
| type | standard | |
| page | 21 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2007 | |
| contenttype | fulltext |
