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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:09:18Z
date available2017-09-04T18:09:18Z
date copyright40491
date issued2010
identifier otherGUATEDAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/192300
description abstractThis specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/713Bnum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, Fen
typestandard
page24
statusActive
treeDLA - CC - DLA Land and Maritime:;2010
contenttypefulltext


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