MIL-PRF-19500/760
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7579U2, 2N7581U2, 2N7583U2, AND 2N7585U2, JANTXVR, JANTXVF, JANSR, AND JANSF
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:16:11Z | |
| date available | 2017-09-04T18:16:11Z | |
| date copyright | 03/30/2011 | |
| date issued | 2011 | |
| identifier other | HMFNGEAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/199114 | |
| language | English | |
| title | MIL-PRF-19500/760 | num |
| title | SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7579U2, 2N7581U2, 2N7583U2, AND 2N7585U2, JANTXVR, JANTXVF, JANSR, AND JANSF | en |
| type | standard | |
| page | 22 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2011 | |
| contenttype | fulltext |

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