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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7579U2, 2N7581U2, 2N7583U2, AND 2N7585U2, JANTXVR, JANTXVF, JANSR, AND JANSF

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:16:11Z
date available2017-09-04T18:16:11Z
date copyright03/30/2011
date issued2011
identifier otherHMFNGEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/199114
languageEnglish
titleMIL-PRF-19500/760num
titleSEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7579U2, 2N7581U2, 2N7583U2, AND 2N7585U2, JANTXVR, JANTXVF, JANSR, AND JANSFen
typestandard
page22
statusActive
treeDLA - CC - DLA Land and Maritime:;2011
contenttypefulltext


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