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SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:18:01Z
date available2017-09-04T18:18:01Z
date copyright08/07/2008
date issued2008
identifier otherHQMYGCAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/200772
description abstractThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/429Lnum
titleSEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKCen
typestandard
page26
statusRevised
treeDLA - CC - DLA Land and Maritime:;2008
contenttypefulltext


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