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MICROCIRCUIT, LINEAR, SINGLE 9 AMP HIGH SPEED LOW SIDE MOSFET DRIVER WITH ENABLE, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:18:11Z
date available2017-09-04T18:18:11Z
date copyright05/01/2013
date issued2013
identifier otherHQUTCFAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/200894
description abstractThis drawing documents the general requirements of a high performance single 9 amp high speed low side metal oxide semiconductor field effect transistor (MOSFET) with enable microcircuit, with an operating temperature ranges of -40°C to +105°C for device type 01 and -55°C to +125°C for device type 02.
languageEnglish
titleDSCC-VID-V62/11601 REV Bnum
titleMICROCIRCUIT, LINEAR, SINGLE 9 AMP HIGH SPEED LOW SIDE MOSFET DRIVER WITH ENABLE, MONOLITHIC SILICONen
typestandard
page16
statusActive
treeDLA - CC - DLA Land and Maritime:;2013
contenttypefulltext


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