DSCC-VID-V62/11601 REV B
MICROCIRCUIT, LINEAR, SINGLE 9 AMP HIGH SPEED LOW SIDE MOSFET DRIVER WITH ENABLE, MONOLITHIC SILICON
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:18:11Z | |
| date available | 2017-09-04T18:18:11Z | |
| date copyright | 05/01/2013 | |
| date issued | 2013 | |
| identifier other | HQUTCFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/200894 | |
| description abstract | This drawing documents the general requirements of a high performance single 9 amp high speed low side metal oxide semiconductor field effect transistor (MOSFET) with enable microcircuit, with an operating temperature ranges of -40°C to +105°C for device type 01 and -55°C to +125°C for device type 02. | |
| language | English | |
| title | DSCC-VID-V62/11601 REV B | num |
| title | MICROCIRCUIT, LINEAR, SINGLE 9 AMP HIGH SPEED LOW SIDE MOSFET DRIVER WITH ENABLE, MONOLITHIC SILICON | en |
| type | standard | |
| page | 16 | |
| status | Active | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |

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