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MIL-PRF-19500/662E
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
| contributor author | DLA - CC - DLA Land and Maritime | |
| date accessioned | 2017-09-04T18:20:03Z | |
| date available | 2017-09-04T18:20:03Z | |
| date copyright | 03/11/2013 | |
| date issued | 2013 | |
| identifier other | HVOZBFAAAAAAAAAA.pdf | |
| identifier uri | https://yse.yabesh.ir/std/handle/yse/202727 | |
| description abstract | This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. | |
| language | English | |
| title | MIL-PRF-19500/662E | num |
| title | SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F | en |
| type | standard | |
| page | 22 | |
| status | Revised | |
| tree | DLA - CC - DLA Land and Maritime:;2013 | |
| contenttype | fulltext |
