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SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:21:39Z
date available2017-09-04T18:21:39Z
date copyright02/03/2012
date issued2012
identifier otherHZGGUEAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/204071
description abstractThis specification covers the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.Intended Use: Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
languageEnglish
titleMIL-PRF-19500/688Bnum
titleSEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANSen
typestandard
page25
statusActive
treeDLA - CC - DLA Land and Maritime:;2012
contenttypefulltext


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