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MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICON

contributor authorDLA - CC - DLA Land and Maritime
date accessioned2017-09-04T18:23:36Z
date available2017-09-04T18:23:36Z
date copyright03/16/2009
date issued2009
identifier otherIELOLCAAAAAAAAAA.pdf
identifier urihttps://yse.yabesh.ir/std/handle/yse/205998
description abstractThis drawing documents the general requirements of a high performance quadruple bus buffer gate with 3-state outputs microcircuit, with an operating temperature range of -55°C to +125°C.
languageEnglish
titleDSCC-VID-V62/03648 REV Anum
titleMICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS, MONOLITHIC SILICONen
typestandard
page11
statusActive
treeDLA - CC - DLA Land and Maritime:;2009
contenttypefulltext


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